FDC6318P

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.5A

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

700mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

90mOhm @ 2.5A, 4.5V

Supplier Device Package :

SuperSOT™-6

Vgs(th) (Max) @ Id :

1.5V @ 250µA