QS8K11TCR

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3.5A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

-

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.3nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

1.5W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

50mOhm @ 3.5A, 10V

Supplier Device Package :

TSMT8

Vgs(th) (Max) @ Id :

2.5V @ 1mA