DMT3011LDT-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8A, 10.7A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

13.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

641pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 155°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Power - Max :

1.9W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

20mOhm @ 6A, 10V

Supplier Device Package :

V-DFN3030-8 (Type K)

Vgs(th) (Max) @ Id :

3V @ 250µA