SIS990DN-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

12.1A

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8 Dual

Power - Max :

25W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

85mOhm @ 8A, 10V

Supplier Device Package :

PowerPAK® 1212-8 Dual

Vgs(th) (Max) @ Id :

4V @ 250µA