SH8M51GZETB

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

3A (Ta), 2.5A (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 5V, 12.5nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 25V, 1550pF @ 25V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

1.4W (Ta)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA