SISF02DN-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

30.5A (Ta), 60A (Tc)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Common Drain

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

PowerPAK® 1212-8SCD

Power - Max :

5.2W (Ta), 69.4W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.5mOhm @ 7A, 10V

Supplier Device Package :

PowerPAK® 1212-8SCD

Vgs(th) (Max) @ Id :

2.3V @ 250µA