SIZF360DT-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

23A (Ta), 83A (Tc), 34A (Ta), 143A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual), Schottky

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V, 62nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 15V, 3150pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-PowerPair™

Power - Max :

3.8W (Ta), 52W (Tc), 4.3W (Ta), 78W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 10A, 10V, 1.9mOhm @ 10A, 10V

Supplier Device Package :

6-PowerPair™

Vgs(th) (Max) @ Id :

2.2V @ 250µA