HP8M31TB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

8.5A (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

12.3nC @ 10V, 38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 30V, 2300pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V

Supplier Device Package :

8-HSOP

Vgs(th) (Max) @ Id :

3V @ 1mA