CSD86336Q3DT

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

20A (Ta)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate, 5V Drive

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 45V, 7.4nC @ 45V

Input Capacitance (Ciss) (Max) @ Vds :

494pF @ 12.5V, 970pF @ 12.5V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 125°C

Package / Case :

8-PowerTDFN

Power - Max :

6W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V

Supplier Device Package :

8-VSON (3.3x3.3)

Vgs(th) (Max) @ Id :

1.9V @ 250µA, 1.6V @ 250µA