SQUN702E-T1_GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

30A (Tc), 20A (Tc)

Drain to Source Voltage (Vdss) :

40V, 200V

FET Feature :

Standard

FET Type :

N and P-Channel, Common Drain

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V

Input Capacitance (Ciss) (Max) @ Vds :

1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

Die

Power - Max :

48W (Tc), 60W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V

Supplier Device Package :

Die

Vgs(th) (Max) @ Id :

2.5V @ 250µA, 3.5V @ 250µA