SI6562CDQ-T1-BE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V, 51nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V, 1200pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V

Supplier Device Package :

8-TSSOP

Vgs(th) (Max) @ Id :

1.5V @ 250µA