SQJ202EP-T2_GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

20A (Tc), 60A (Tc)

Drain to Source Voltage (Vdss) :

12V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V, 54nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

975pF @ 6V, 2525pF @ 6V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

PowerPAK® SO-8 Dual

Power - Max :

27W (Tc), 48W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 15A, 10V, 3.3mOhm @ 20A, 10V

Supplier Device Package :

PowerPAK® SO-8 Dual Asymmetric

Vgs(th) (Max) @ Id :

2V @ 250µA