BSZ0908NDXTMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.8A (Ta), 7.6A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3nC @ 4.5V, 6.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 15V, 730pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerVDFN

Power - Max :

700mW (Ta), 860mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V

Supplier Device Package :

PG-WISON-8

Vgs(th) (Max) @ Id :

2V @ 250µA