MSCSM120HM16CTBL3NG

制造商 :

Microchip Technology

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

150A

Drain to Source Voltage (Vdss) :

1200V

FET Feature :

Silicon Carbide (SiC)

FET Type :

4 N-Channel (Phase Leg)

Gate Charge (Qg) (Max) @ Vgs :

464nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 1000V

Mounting Type :

Chassis Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

560W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

16mOhm @ 80A, 20V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

2.8V @ 2mA