DMN10H6D2LFDB-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

270mA (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

1.2nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Power - Max :

700mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

6Ohm @ 190mA, 10V

Supplier Device Package :

U-DFN2020-6 (Type B)

Vgs(th) (Max) @ Id :

2V @ 1mA