DMC67D8UFDBQ-7

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

390mA (Ta), 2.9A (Ta)

Drain to Source Voltage (Vdss) :

60V, 20V

FET Feature :

Standard

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

0.4pC @ 4.5V, 7.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

41pF @ 25V, 443pF @ 16V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UDFN Exposed Pad

Power - Max :

580mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V

Supplier Device Package :

U-DFN2020-6 (Type B)

Vgs(th) (Max) @ Id :

2.5V @ 250µA, 1.25V @ 250µA