SI8902AEDB-T2-E1

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

11A

Drain to Source Voltage (Vdss) :

24V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFBGA

Power - Max :

5.7W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

28mOhm @ 1A, 4.5V

Supplier Device Package :

6-Micro Foot™ (1.5x1)

Vgs(th) (Max) @ Id :

900mV @ 250µA