DMHT10H032LFJ-13

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

4 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

11.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

683pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

12-PowerVDFN

Power - Max :

900mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

33mOhm @ 6A, 10V

Supplier Device Package :

V-DFN5045-12 (Type C)

Vgs(th) (Max) @ Id :

2.5V @ 250µA