FDD3510H

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4.3A, 2.8A

Drain to Source Voltage (Vdss) :

80V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel, Common Drain

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 40V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Power - Max :

1.3W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

80mOhm @ 4.3A, 10V

Supplier Device Package :

TO-252 (DPAK)

Vgs(th) (Max) @ Id :

4V @ 250µA