TPC8408,LQ(S

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

6.1A, 5.3A

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

450mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

32mOhm @ 3.1A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.3V @ 100µA