NTTFD4D1N03P1E

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 54A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V, 14nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1103pF @ 15V, 972pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

12-PowerWQFN

Power - Max :

1W (Ta), 20W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V

Supplier Device Package :

12-WQFN (3.3x3.3)

Vgs(th) (Max) @ Id :

2.2V @ 270µA