NTMFD6H852NLT1G

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

295mA

Drain to Source Voltage (Vdss) :

80V

FET Feature :

-

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

26pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

250mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 500mA, 10V

Supplier Device Package :

8-DFN (5x6) Dual Flag (SO8FL-Dual)

Vgs(th) (Max) @ Id :

2.5V @ 250µA