DMT10H017LPD-13

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

54.7A (Tc)

Drain to Source Voltage (Vdss) :

100V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

28.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1986pF @ 50V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

2.2W (Ta), 78W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

17.4mOhm @ 17A, 10V

Supplier Device Package :

PowerDI5060-8

Vgs(th) (Max) @ Id :

3V @ 250µA