NTMFD1D4N02P1E

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

13A (Ta), 74A (Tc), 24A (Ta), 155A (Tc)

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 4.5V, 21.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 13V, 3603pF @ 13V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

960mW (Ta), 1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 20A, 10V, 1.1mOhm @ 37A, 10V

Supplier Device Package :

8-PQFN (5x6)

Vgs(th) (Max) @ Id :

2V @ 250µA, 2V @ 800µA