FDMS1D2N03DSD

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V, 117nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1410pF @ 15V, 4860pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerWDFN

Power - Max :

2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V

Supplier Device Package :

8-PQFN (5x6)

Vgs(th) (Max) @ Id :

2.5V @ 320µA, 3V @ 1mA