SI1958DH-T1-E3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1.3A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

105pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

1.25W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

205mOhm @ 1.3A, 4.5V

Supplier Device Package :

SC-70-6

Vgs(th) (Max) @ Id :

1.6V @ 250µA