SI3911DV-T1-E3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1.8A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

830mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

145mOhm @ 2.2A, 4.5V

Supplier Device Package :

6-TSOP

Vgs(th) (Max) @ Id :

450mV @ 250µA (Min)