SI5511DC-T1-E3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A, 3.6A

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

435pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power - Max :

3.1W, 2.6W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

55mOhm @ 4.8A, 4.5V

Supplier Device Package :

1206-8 ChipFET™

Vgs(th) (Max) @ Id :

2V @ 250µA