NTLJD2105LTBG

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.5A

Drain to Source Voltage (Vdss) :

8V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Power - Max :

520mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

50mOhm @ 4A, 4.5V

Supplier Device Package :

6-WDFN (2x2)

Vgs(th) (Max) @ Id :

1V @ 250µA