SI3529DV-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.5A, 1.95A

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

205pF @ 20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

1.4W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

125mOhm @ 2.2A, 10V

Supplier Device Package :

6-TSOP

Vgs(th) (Max) @ Id :

3V @ 250µA