APTC90H12T2G

制造商 :

Microsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

30A

Drain to Source Voltage (Vdss) :

900V

FET Feature :

Super Junction

FET Type :

4 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 100V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP2

Power - Max :

250W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

120mOhm @ 26A, 10V

Supplier Device Package :

SP2

Vgs(th) (Max) @ Id :

3.5V @ 3mA