HAT2210RWS-E

制造商 :

Intersil (Renesas Electronics Corporation)

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

7.5A (Ta), 8A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

2 N-Channel (Dual), Schottky

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V, 11nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 10V, 1330pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Power - Max :

1.5W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2.5V @ 1mA