AOSD26313C

制造商 :

Alpha and Omega Semiconductor, Inc.

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

7A (Ta), 5.7A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

N and P-Channel Complementary

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V, 33nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

600pF @ 15V, 1100pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power - Max :

1.7W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

20mOhm @ 7A, 10V, 32mOhm @ 5.7A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

2.3V @ 250µA, 2.2V @ 250µA