NTMFD4C820NAT1G

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

9.1A (Ta), 13.7A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V, 29nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

970pF @ 15V, 1950pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

1.09W (Ta), 1.15W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V

Supplier Device Package :

8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)

Vgs(th) (Max) @ Id :

2.1V @ 250µA