FQD4P25TM-WS

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3.1A (Tc)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

420 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

2.5W (Ta), 45W (Tc)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

2.1Ohm @ 1.55A, 10V

Supplier Device Package :

TO-252AA

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250µA