TPH2R608NH,L1Q

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

150A (Tc)

Drain to Source Voltage (Vdss) :

75 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

72 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

6000 pF @ 37.5 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-PowerVDFN

Power Dissipation (Max) :

142W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.6mOhm @ 50A, 10V

Supplier Device Package :

8-SOP Advance (5x5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA