TK125V65Z,LQ

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

24A (Ta)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2250 pF @ 300 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

4-VSFN Exposed Pad

Power Dissipation (Max) :

190W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

125mOhm @ 12A, 10V

Supplier Device Package :

4-DFN-EP (8x8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1.02mA