ISC027N10NM6ATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

23A (Ta), 192A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

8V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

72.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

5500 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

3W (Ta), 217W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.7mOhm @ 50A, 10V

Supplier Device Package :

PG-TDSON-8 FL

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.3V @ 116µA