TK9J90E,S1E

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

9A (Ta)

Drain to Source Voltage (Vdss) :

900 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2000 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power Dissipation (Max) :

250W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 4.5A, 10V

Supplier Device Package :

TO-3P(N)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 900µA