NTH4L022N120M3S

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

68A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

151 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

3175 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Power Dissipation (Max) :

352W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

30mOhm @ 40A, 18V

Supplier Device Package :

TO-247-4L

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+22V, -10V

Vgs(th) (Max) @ Id :

4.4V @ 20mA