SSM3J353F,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

159 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

600mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

150mOhm @ 2A, 10V

Supplier Device Package :

S-Mini

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+20V, -25V

Vgs(th) (Max) @ Id :

2.2V @ 250µA