SSM6K217FE,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 8V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.1 nC @ 4.2 V

Input Capacitance (Ciss) (Max) @ Vds :

130 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

195mOhm @ 1A, 8V

Supplier Device Package :

ES6

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.2V @ 1mA