IPN70R1K2P7SATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Drain to Source Voltage (Vdss) :

700 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

4.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

174 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

6.3W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.2Ohm @ 900mA, 10V

Supplier Device Package :

PG-SOT223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

3.5V @ 40µA