IRLHM620TRPBF

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

26A (Ta), 40A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

3620 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

2.7W (Ta), 37W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2.5mOhm @ 20A, 4.5V

Supplier Device Package :

PQFN (3x3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.1V @ 50µA