IRF6643TRPBF

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

6.2A (Ta), 35A (Tc)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

55 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2340 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

DirectFET™ Isometric MZ

Power Dissipation (Max) :

2.8W (Ta), 89W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

34.5mOhm @ 7.6A, 10V

Supplier Device Package :

DIRECTFET™ MZ

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.9V @ 150µA