RS3E180ATTB1

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

160 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7200 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power Dissipation (Max) :

1.4W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

5.4mOhm @ 18A, 10V

Supplier Device Package :

8-SOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 5mA