IRLS640A

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

9.8A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

56 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

1705 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Power Dissipation (Max) :

40W (Tc)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

180mOhm @ 4.9A, 5V

Supplier Device Package :

TO-220F-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA