AOT410L

制造商 :

Alpha and Omega Semiconductor, Inc.

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 150A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

7V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

129 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

7950 pF @ 50 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

1.9W (Ta), 333W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 20A, 10V

Supplier Device Package :

TO-220

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

4V @ 250µA