IPP80P03P4L04AKSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

80A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

160 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

11300 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-220-3

Power Dissipation (Max) :

137W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

4.4mOhm @ 80A, 10V

Supplier Device Package :

PG-TO220-3-1

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

+5V, -16V

Vgs(th) (Max) @ Id :

2V @ 253µA