IMZ120R350M1HXKSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4.7A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

15V, 18V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

5.3 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :

182 pF @ 800 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-4

Power Dissipation (Max) :

60W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

350mOhm @ 2A, 18V

Supplier Device Package :

PG-TO247-4-1

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+23V, -7V

Vgs(th) (Max) @ Id :

5.7V @ 1mA